* q q 0.7 4.0 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* Symbol VCBO VCEO VEBO ICP IC PC
* Tj Tstg Ratings 40 20 7 8 5 1 150
2SD2249
Panasonic Semiconductor
40.49 KB
Silicon npn transistor.
Transistor
2SD2249
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
1.05 2.5±0.1 ±0.05 6.9±0.1
0.15
(1.45) 0.8
0.5 4.
📁 Related Datasheet
2SD2240 - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: m.
2SD2240 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: m.
2SD2240A - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: m.
2SD2241 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2241
Switching Applications
2SD2241
Unit: mm
• High DC current gain: hFE = 2000 (min) • Low saturat.
2SD2241 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2241
..
DESCRIPTION ·With TO-220F package ·High DC.
2SD2241 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Volt.
2SD2242 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Feat.
2SD2242A - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Feat.
