Part number:
2SK3043
Manufacturer:
Panasonic Semiconductor
File Size:
45.78 KB
Description:
Silicon n-channel power f-mos fet.
* q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching p
2SK3043
Panasonic Semiconductor
45.78 KB
Silicon n-channel power f-mos fet.
📁 Related Datasheet
2SK304 - Silicon N Channel Junction FETs
(Kesailun Elctronic)
Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK304
2SK304
D Symbol
Applications For charge sensor, meter amplifier ci.
2SK304 - N-Channel MOSFET
(Sanyo Semicon Device)
.
2SK3042 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3042
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 45mJ q High-speed switching: tf =.
2SK3044 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3044
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .
2SK3045 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3045
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q.
2SK3046 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3046
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .
2SK3047 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q H.
2SK3048 - Silicon N-Channel Power F-MOS FET
(Panasonic Semiconductor)
Power F-MOS FETs
2SK3048
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan.