I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Cha
✔ 2SK656 Application
or general electronic equipment (such as office equipment, communications equipment, measuring instruments a
2SK65, Panasonic Semiconductor
Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor .
2SK655, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
0.75 max.
4.0±0.2 (0.8) 3.0±0.2
2.0±0.
2SK657, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
Unit: mm
For switching
6.9±0.1
(0.4)
2.5±0.1 (1.0)
(1.0) 3.5±0.1 2.0±0.2.
2SK601, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switchin.
