3
(0.65) (0.65) 1.3±0.1 2.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gat
✔ 2SK663 Application
or general electronic equipment (such as office equipment, communications equipment, measuring instruments a
2SK660, NEC
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
Th.
2SK662, Panasonic Semiconductor
Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
2.1±0.1
s Features
q High mutual.
2SK662, Panasonic Semiconductor
Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.425)
I Features
0..
2SK664, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK664
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q S-mini type pack.
2SK664, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK0664 (2SK664)
Silicon N-Channel MOS FET
unit: mm
For switching I Features
(0.425)
0.3+0.1 –0.0 3
0.15+0.10 –0..
2SK665, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s Features
q High-speed switching q Small drive curr.
2SK665, Panasonic Semiconductor
Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
unit: mm
(0.425)
For switching I Features
0.3+0.1 –0.0 3
0.15+0.10 –0.0.
