2SK663 Description
Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching 0.3+0.1 *0.2SK663 Features
* 3 (0.65) (0.65) 1.3±0.1 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 552SK663 Applications
* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
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