Description
Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET unit: mm (0.425) For switching I .
Features
* 0.3+0.1
* 0.0 3
0.15+0.10
* 0.05
1.25±0.10
(0.65) (0.65) 1.3±0.1 2.0±0.2 10°
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
Symbol VDS VGSO ID IDP PD Tch Tstg
Ratings 20
Applications
* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff
