Datasheet4U Logo Datasheet4U.com

K3047 - 2SK3047

Datasheet Summary

Features

  • q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s.

📥 Download Datasheet

Datasheet preview – K3047

Datasheet Details

Part number K3047
Manufacturer Panasonic Semiconductor
File Size 42.57 KB
Description 2SK3047
Datasheet download datasheet K3047 Datasheet
Additional preview pages of the K3047 datasheet.

📁 Similar Datasheet

  • K304 - Silicon N Channel Junction FETs (Kesailun Elctronic)
  • K304 - Photocoupler (KODENSHI KOREA CORP)
  • K300 - Silicon Zener Diodes (Aeroflex)
  • K300 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)
  • K3003 - 2SK3003 (Sanken)
  • K3004 - 2SK3004 (ETC)
  • K300zy - Thyristors (Littelfuse)
  • K301 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
  • K3010 - 4PIN PHOTOTRANSISTOR (Cosmo)
  • K30101X - 4PIN PHOTOTRANSISTOR (Cosmo)
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

Click to expand full text
Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±2 ±4 15 30 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.
Published: |