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PN163NC Silicon NPN Phototransistor

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Description

Phototransistors PN163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max.1.1 0.8 Unit : mm 3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5 For.

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Datasheet Specifications

Part number
PN163NC
Manufacturer
Panasonic Semiconductor
File Size
45.93 KB
Datasheet
PN163NC_PanasonicSemiconductor.pdf
Description
Silicon NPN Phototransistor

Features

* High sensitivity Fast response : tr = 4 µs (typ. ) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package ø1.1 R0.5 12 min. Not soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector cur

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