XN1507 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN1507, Silicon NPN epitaxial planer transistor

Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SD814 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Abso

XN1507 Features

* 1 Composite Transistors PT

* Ta 500 XN1507 IC

* VCE 120 Ta=25˚C 120 VCE=10V 100 25˚C Ta=75˚C 80

* 25˚C IC

* VBE Total power dissipation PT (mW) Collector current IC (mA) 80 300 60 Collector current IC (mA) 12 400 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA