* 1 Composite Transistors PT
* Ta 500 XN2212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC
* VCE 160 VCE(sat)
* IC 100 hFE
* IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter s
XN2212
Panasonic Semiconductor
33.86 KB
Silicon npn epitaxial planer transistor.
Composite Transistors
XN2212
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8 -0.3 0.65±0.15
+0.2 +0.25
1.5 -0.0.
📁 Related Datasheet
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