FK8V0305 - Silicon N-channel MOS FET

Panasonic

Datasheet Details

s.
Low drain-source ON resistance: RDS(on) typ. = 11 mW (VGS = 10 V).
High-speed switching: Qg = 5.1 nC.
Small size surface mounting package: WMini8-F1.
Contributes to mount area reduction.
Eco-friendly Halogen-free package.
Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain.

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Published: Sep 22, 2017 |