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K3026 - 2SK3026

Datasheet Summary

Features

  • q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage s.

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Datasheet Details

Part number K3026
Manufacturer Panasonic
File Size 19.91 KB
Description 2SK3026
Datasheet download datasheet K3026 Datasheet
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Full PDF Text Transcription

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Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Unit Drain to Source breakdown voltage VDSS 60 V Gate to Source voltage VGSS ±20 V Drain current DC Pulse ID IDP ±40 A ±80 A Avalanche energy capacity EAS* 80 mJ Allowable power dissipation TC = 25°C Ta = 25°C PD 50 W 2 Channel temperature Storage temperature Tch 150 °C Tstg −55 to +150 °C * L = 0.
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