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K4208 Datasheet - Panasonic

Silicon N-channel enhancement MOS FET

K4208 Features

* Gate-source surrender voltage VGSS : ±30 V guaranteed

* Avalanche energy capability guaranteed: EAS > 801 mJ

* High-speed switching: tf = 88 ns (typ.)

* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surr

K4208 Datasheet (297.60 KB)

Preview of K4208 PDF

Datasheet Details

Part number:

K4208

Manufacturer:

Panasonic

File Size:

297.60 KB

Description:

Silicon n-channel enhancement mos fet.
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K4208 Silicon N-channel enhancement MOS FET Panasonic

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