K4208 - Silicon N-channel enhancement MOS FET
K4208 Features
* Gate-source surrender voltage VGSS : ±30 V guaranteed
* Avalanche energy capability guaranteed: EAS > 801 mJ
* High-speed switching: tf = 88 ns (typ.)
* Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surr
