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Band Switching Diodes
MA2S077
Silicon epitaxial planar type
Unit : mm
For band switching
0.15 min. 0.15 min.
I Features
• Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02 0.8 ± 0.1
+ 0.05
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100 −25 to +85 −55 to +150
Unit V mA °C °C
0.7 ± 0.
MA2S077 Datasheet
