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MA2SD30 - Schottky Barrier Diodes

Datasheet Summary

Features

  • s.
  • Small reverse current: IR < 2 µA (at VR = 30 V).
  • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05.
  • 0.03 0.80+0.05.
  • 0.03 1 (0.60) 0.12+0.05.
  • 0.02 (0.80) (0.60) 0.01±0.01 5˚ 2 0.30±0.05.
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current.
  • 0+0.

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Datasheet Details

Part number MA2SD30
Manufacturer Panasonic Semiconductor
File Size 207.99 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2SD30 Datasheet
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www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2SD30 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Small reverse current: IR < 2 µA (at VR = 30 V) • Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05 –0.03 0.80+0.05 –0.03 1 (0.60) 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5˚ 2 0.30±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * 0+0 –0.05 5˚ Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 100 200 1 125 −55 to +125 Unit V (0.15) V mA mA A °C °C 0.01±0.
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