MA2SD30 Datasheet, Diodes, Panasonic Semiconductor

MA2SD30 Features

• Diodes
• Small reverse current: IR < 2 µA (at VR = 30 V)
• Optimum for high frequency rectification because of its short reverse recovery time trr . 0.80±0.05 0.60+0.05
  &n

PDF File Details

Part number:

MA2SD30

Manufacturer:

Panasonic Semiconductor

File Size:

207.99kb

Download:

📄 Datasheet

Description:

Schottky barrier diodes.

MA2SD30 Application

• Applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). C

TAGS

MA2SD30

Panasonic Semiconductor

📁 Related Datasheet

MA2SD31 - Schottky Barrier Diodes (Panasonic Semiconductor)
.. Schottky Barrier Diodes (SBD) MA2SD31 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV).

MA2SD32 - Schottky Barrier Diodes (Panasonic Semiconductor)
.. Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV).

MA2SD032 - Schottky Barrier Diodes (Panasonic)
Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV) = 200 mA rectificati.

MA2SD10 - Schottky Barrier Diodes (Panasonic)
Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 For super-high speed switching circuit I Features • • • • Sealed in .

MA2SD19 - Schottky Barrier Diodes (Panasonic)
Schottky Barrier Diodes (SBD)) MA2SD19 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.

MA2SD24 - Schottky Barrier Diodes (Panasonic)
Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0..

MA2SD25 - Schottky Barrier Diodes (Panasonic Semiconductor)
Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0..

MA2SD29 - Schottky Barrier Diodes (Panasonic Semiconductor)
Schottky Barrier Diodes (SBD) MA2SD29 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • Low forward voltage: VF < 0.

MA2S077 - Schottky Barrier Diodes (Panasonic)
Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. 0.15 min. I Features • Low forward dynamic resis.

MA2S111 - Schottky Barrier Diodes (Panasonic)
Switching Diodes MA2S111 Silicon epitaxial planar type Unit : mm For switching circuits I Features • Super-small SS-mini type package • Allowing hig.