MA2SD25 Datasheet (Panasonic Semiconductor)

MA2SD25, Schottky Barrier Diodes

Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 0.03 0.80±0.05 0.60+0.05 0.03 0.12+0.05 0.02 (0.80) (0.60) 0.01±0.01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak forwardsurge-current Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rati

MA2SD25 Features

* 1 Publication date: August 2001 SKH00029AED 1 MA2SD25 IF  V F 103 Ta = 125°C 102 104 75°C 25°C

* 20°C 105 IR  V R 40 35 Ct  VR Ta = 25°C Forward current IF (mA) Reverse current IR (µA) Ta = 125°C 103 75°C 10 2 Terminal capacitance Ct (pF) 20 30 25 20 15 10 5 10 1 25°C 10 10