* 1 Publication date: August 2001 SKH00029AED 1 MA2SD25 IF V F 103 Ta = 125°C 102 104 75°C 25°C
* 20°C 105 IR V R 40 35 Ct VR Ta = 25°C Forward current IF (mA) Reverse current IR (µA) Ta = 125°C 103 75°C 10 2 Terminal capacitance Ct (pF) 20 30 25 20 15 10 5 10 1 25°C 10 10
MA2SD25
Panasonic Semiconductor
95.47 KB
Schottky barrier diodes.
Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 0.03 0.80±0.05 0.60+.
📁 Related Datasheet
MA2SD24 Schottky Barrier Diodes (Panasonic)
MA2SD29 Schottky Barrier Diodes (Panasonic Semiconductor)
MA2SD032 Schottky Barrier Diodes (Panasonic)
MA2SD10 Schottky Barrier Diodes (Panasonic)
MA2SD19 Schottky Barrier Diodes (Panasonic)
MA2SD30 Schottky Barrier Diodes (Panasonic Semiconductor)
MA2SD31 Schottky Barrier Diodes (Panasonic Semiconductor)
MA2SD32 Schottky Barrier Diodes (Panasonic Semiconductor)
MA2S077 Schottky Barrier Diodes (Panasonic)
MA2S111 Schottky Barrier Diodes (Panasonic)
