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MA2SD10 - Schottky Barrier Diodes

Datasheet Summary

Features

  • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 ± 0.05 Unit : mm 2 1 0.60 0.60 0.12.
  • 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current.
  • Peak forward current Average forward current Junction temperature Sto.

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Datasheet Details

Part number MA2SD10
Manufacturer Panasonic
File Size 38.17 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA2SD10 Datasheet
Additional preview pages of the MA2SD10 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA2SD10 Silicon epitaxial planar type 0.30 ± 0.05 For super-high speed switching circuit I Features • • • • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting 0.80 0.80 ± 0.05 Unit : mm 2 1 0.60 0.60 0.12 − 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current* Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to + 125 Unit V V A mA mA °C °C 1.20 − 0.03 + 0.05 1.60 ± 0.
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