MA3J700 Datasheet (Panasonic) - Silicon epitaxial planar type

MA3J700, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 S-mini type 3-pin package Allowing to rectify under (IF(AV) = 500 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak f

MA3J700 Features

* 1 MA3J700 IF  V F 103 25°C Ta = 100°C 0.8 0.7 Schottky Barrier Diodes (SBD) VF  Ta 104 IR  VR 102 Ta = 100°C Forward current IF (mA) Forward voltage VF (V) 0.6 0.5 0.4 0.3 100 mA 0.2 0.1 10 mA

* 20°C 10 IF = 500 mA Reverse current IR (µA) 103 102 25°C 1 10

* 1 10