MA3J741 Datasheet (Panasonic) - Silicon epitaxial planar type

MA3J741, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3J741 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 55 to +125 Unit V V mA mA °C °C 0.9 ± 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-7

MA3J741 Features

* % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3.

* : trr measuring instrument Bias Applica