MA3J745 Datasheet (Panasonic) - Silicon epitaxial planar type

MA3J745, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) Optimum for high-frequency rectification because of its short reverse recovery time (trr) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward c

MA3J745 Features

* % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3.

* : trr measuring instrument Bias Applica