MA3J741E Datasheet (Panasonic) - Silicon epitaxial planar type

MA3J741E, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 55 to +125 °C °C mA Unit V V mA 0.9 ± 0.1 EIAJ : SC-70 Flat S-Mini Type Pa

MA3J741E Features

* E Unit µA V V pF ns 1.5 1 Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 00