MA3J745E Datasheet (Panasonic) - Silicon epitaxial planar type

MA3J745E, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 55 to +125 °C °C mA Unit V V mA 0.9 ± 0.1 1 : Anode 1 2 : Anode 2 3 : Cathode 1, 2 E

MA3J745E Features

* 1 MA3J745E IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta 104 Ta = 125°C 0.8 IR  VR 102 75°C 25°C

* 20°C Forward current IF (mA) Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 103 IF = 30 mA 75°C 102 10 0.6 10 mA 0.4 1 10 25°C 10

* 1 0.2 1 mA 1