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MA3X727 - Silicon epitaxial planar type

Features

  • Sealed in the Mini type mold. High breakdown voltage type (VR = 50 V).
  • Allowing to rectify under (IF(AV) = 200 mA) condition.
  • High reliability 2.9.
  • 0.05 + 0.2 2.8.
  • 0.3 0.65 ± 0.15 + 0.2 1.5.
  • 0.05 + 0.25 0.65 ± 0.15 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1.
  • 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive.

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Datasheet Details

Part number MA3X727
Manufacturer Panasonic
File Size 46.24 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X727 Datasheet
Additional preview pages of the MA3X727 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3X727 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Sealed in the Mini type mold. High breakdown voltage type (VR = 50 V) • Allowing to rectify under (IF(AV) = 200 mA) condition • High reliability 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 200 1 150 −55 to +150 Unit V V mA mA A °C °C 0.1 to 0.3 0.4 ± 0.
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