Part number:
MIP2E2DMY
Manufacturer:
Panasonic
File Size:
334.24 KB
Description:
Silicon mosfet.
MIP2E2DMY MOS (IPD) Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 .
MIP2E2DMY Datasheet (334.24 KB)
MIP2E2DMY
Panasonic
334.24 KB
Silicon mosfet.
MIP2E2DMY MOS (IPD) Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 .
📁 Related Datasheet
MIP2E2DMU IPD (Panasonic)
MIP2E2D High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E1D High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E1DMC IPD (Panasonic)
MIP2E1DMS Silicon MOS-type integrated circuit (Panasonic)
MIP2E1DMTSCF Silicon MOSFET (Panasonic)
MIP2E1DMU Silicon MOS-type integrated circuit (Panasonic)
MIP2E3D High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E3DMS Silicon MOS-type integrated circuit (Panasonic)
MIP2E3DMU Silicon MOSFET (Panasonic)