Datasheet4U Logo Datasheet4U.com

MIP2E2DMY - Silicon MOSFET

MIP2E2DMY Description

MIP2E2DMY MOS (IPD) * * * * * * Ta = 25°C ± 3°C VD 700 V VC 10 V ID 0.585 A IDP 0.82 A IC 0.1 A Tch 150 .

📥 Download Datasheet

Preview of MIP2E2DMY PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MIP2E2DMY
Manufacturer
Panasonic
File Size
334.24 KB
Datasheet
MIP2E2DMY-Panasonic.pdf
Description
Silicon MOSFET

📁 Related Datasheet

  • MIP2E2D - High-Performance IPD for Battery Chaegers (Matsushita)
  • MIP2E1D - High-Performance IPD for Battery Chaegers (Matsushita)
  • MIP2E3D - High-Performance IPD for Battery Chaegers (Matsushita)
  • MIP2E4D - High-Performance IPD (Matsushita)
  • MIP2E4DMY - Silicon MOS IPD (Panasonic Semiconductor)
  • MIP2E5D - High-Performance IPD for Battery Chaegers (Matsushita)
  • MIP2E7D - High-Performance IPD for Battery Chaegers (Matsushita)
  • MIP251-10 - MIP25x-10 /16-IQ (euroclamp)

📌 All Tags

Panasonic MIP2E2DMY-like datasheet