MIP251-10
euroclamp
1.22MB
Mip25x-10 /16-iq.
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MIP252-10 - MIP25x-10 /16-IQ
(euroclamp)
MIP25x-10,16-IQ
GENERAL INFORMATION pitch: housing height: housing depth: dimensional class: wire section: clamp opening size: wire stripping: operat.
MIP281 - Silicon MOSFET
(Panasonic)
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MIP281
MOS
(IPD)
s
• MOS FET CMOS
• (85 VAC ∼ 274 VAC)
•(
)
•
s
• •.
MIP289 - Silicon MOS type integrated circuit
(Panasonic)
..
(IPD)
MIP289
MOS
I
• • , • IPD • 150 µA , , , IPD
1 2 3 4
6.3±0.2
Unit : mm
+0 0.25 –0.05
MOSFET
CMOS
,
9.4±0.3 8 7 5
.10
.
MIP2C10MP - Silicon MOS type integrated circuit
(Panasonic)
(IPD)
MIP2C10MP
MOS
■
• : 80% • • )
8
Unit : mm
(100 VAC
: 20 mW,
9.4±0.3
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
(
− 12
)
■
• • AC ( )
1 2 3.
MIP2C2 - High-Performance IPD
(Matsushita)
( DataSheet : .. )
r Undement p lo e Dev
Saves power during standby, enhances efficiency
MIP2C2 High-Performance IPD for Battery C.
MIP2C30MP - Silicon MOS-type IC
(Panasonic)
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はRoHS(EU 2002/95/EC)にしています。
(IPD)
MIP2C30MP
MOS.
MIP2C40MP - Silicon MOS Type Integrated Circuits
(Panasonic)
はRoHS(EU 2002/95/EC)にしています。
(IPD)
MIP2C40MP
MOS
■
• : 80% • • )
8
Unit : mm
(100 VAC
: 20 mW,
9.4±0.3
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
(.
MIP2C50MP - Silicon MOS Type Integrated Circuits
(Panasonic)
はRoHS(EU 2002/95/EC)にしています。
(IPD)
MIP2C50MP
MOS
■
• : 80% • • )
8
Unit : mm
(100 VAC
: 20 mW,
9.4±0.3
7
5
7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2
(.
MIP2E1D - High-Performance IPD for Battery Chaegers
(Matsushita)
I
(MIP022X)
IPD
I
G(
12 V/3 A
: 100 VAC
0.3 W
: 100 VAC
G IPD
(MIP022X)
MIP022X
G
IPD
IPD PWM
60 W
: 1/20)
; 70 mW, ; 70 ,
264 VAC 26.
MIP2E1DMC - IPD
(Panasonic)
(IPD)
MIP2E1DMC (
MOS
I
• •
)
Unit : mm
(1.4)
10.5±0.3 4.6±0.2 1.4±0.1
3.0±0.5 0 to 0.5
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
I
Ta = 25°C ± 3°C
VD VC.
