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LN77L GaAlAs Infrared Light Emitting Diode

LN77L Description

Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems .

LN77L Features

* High-power output, high-efficiency : PO = 18 mW (typ. ) Fast response and high-speed modulation capability : fC = 20 MHz (typ. ) Wide directivity : θ = 20 deg. (typ. ) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0.3 1.5 (2.0) 2-0.8 max. 2-0.6±0.15 2.54 0.6±0.15 1 2 1: Anode

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Datasheet Details

Part number
LN77L
Manufacturer
Panasonic Semiconductor
File Size
40.74 KB
Datasheet
LN77L_PanasonicSemiconductor.pdf
Description
GaAlAs Infrared Light Emitting Diode

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Panasonic Semiconductor LN77L-like datasheet