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C30807 - (C30807 - C30831) N-Type Silicon PIN Photodetectors

This page provides the datasheet information for the C30807, a member of the C30810 (C30807 - C30831) N-Type Silicon PIN Photodetectors family.

Datasheet Summary

Description

This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.

Features

  • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2.
  • Low Operating Voltage VR = 45V.
  • Anti-Reflection Coated to Enhance Responsivity at 900 nm.
  • Hermetically-Sealed Packages.
  • Spectral Response Range 400 to 1100 nm Maximum Ratings, Absolute-Maximum Values (All Types) DC Reverse Operating Voltage VR.
  • .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation.
  • . . . . .5 mA/mm2 Peak valu.

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Datasheet preview – C30807

Datasheet Details

Part number C30807
Manufacturer PerkinElmer Optoelectronics
File Size 140.55 KB
Description (C30807 - C30831) N-Type Silicon PIN Photodetectors
Datasheet download datasheet C30807 Datasheet
Additional preview pages of the C30807 datasheet.

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Full PDF Text Transcription

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N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated to enhance responsivity at 900 nm. These characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications. Features • Broad Range of Photosensitive Surface Areas 0.
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