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C30902E - (C309xxx) Silicon Avalanche Photodiodes

C30902E Description

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PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

C30902E Features

* High Quantum Efficiency 77% Typical at 830 nm
* C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second
* Hermetically

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Datasheet Details

Part number
C30902E
Manufacturer
PerkinElmer Optoelectronics
File Size
232.32 KB
Datasheet
C30902E_PerkinElmerOptoelectronics.pdf
Description
(C309xxx) Silicon Avalanche Photodiodes

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C309xxx Silicon Avalanche Photodiodes PerkinElmer Optoelectronics
PerkinElmer Optoelectronics C30902E-like datasheet