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NE5209N - Wideband variable gain amplifier

Description

The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations.

This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture.

Features

  • Gain to 1.5GHz.
  • 850MHz bandwidth.
  • High impedance differential input.
  • 50Ω differential output.
  • Single 5V power supply.
  • 0 - 1V gain control pin.
  • >60dB gain control range at 200MHz.
  • 26dB maximum gain differential.
  • Exceptional.

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INTEGRATED CIRCUITS NE/SA5209 Wideband variable gain amplifier Product specification RF Communications Handbook 1990 Aug 20 Philips Semiconductors Philips Semiconductors Product specification Wideband variable gain amplifier NE/SA5209 DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ) differential inputs. The output is 50Ω differential.
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