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LX703 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX703 Description

polyfet rf devices LX703 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LX703 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 100.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T =

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Datasheet Details

Part number
LX703
Manufacturer
Polyfet RF Devices
File Size
37.69 KB
Datasheet
LX703_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
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