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LX723

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX723 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 45.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

LX723 Datasheet (37.96 KB)

Preview of LX723 PDF

Datasheet Details

Part number:

LX723

Manufacturer:

Polyfet RF Devices

File Size:

37.96 KB

Description:

Silicon gate enhancement mode rf power ldmos transistor.

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LX723 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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