Part number:
S8201
Manufacturer:
Polyfet RF Devices
File Size:
37.23 KB
Description:
Silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
S8201 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
Datasheet Details
S8201
Polyfet RF Devices
37.23 KB
Silicon gate enhancement mode rf power vdmos transistor.
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