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S8202

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

S8202 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

S8202 Datasheet (37.04 KB)

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Datasheet Details

Part number:

S8202

Manufacturer:

Polyfet RF Devices

File Size:

37.04 KB

Description:

Silicon gate enhancement mode rf power vdmos transistor.

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S8202 SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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