SP201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices SP201 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number: SP201
Manufacturer: Polyfet RF Devices
File Size: 34.85 KB
Datasheet: SP201_PolyfetRFDevices.pdf
Description: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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SP201 SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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