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SP201

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SP201 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

SP201 Datasheet (34.85 KB)

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Datasheet Details

Part number:

SP201

Manufacturer:

Polyfet RF Devices

File Size:

34.85 KB

Description:

Silicon gate enhancement mode rf power vdmos transistor.

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SP201 SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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