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SP702

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SP702 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

SP702 Datasheet (36.45 KB)

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Datasheet Details

Part number:

SP702

Manufacturer:

Polyfet RF Devices

File Size:

36.45 KB

Description:

Silicon gate enhancement mode rf power vdmos transistor.

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SP702 SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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