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F1107 RF POWER VDMOS TRANSISTOR

F1107 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1107 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1107 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATING

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Datasheet Details

Part number
F1107
Manufacturer
Polyfet RF Devices
File Size
39.61 KB
Datasheet
F1107_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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