PDEC2310Z Datasheet - Potens semiconductor

PDEC2310Z N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDEC2310Z Features

* 20V,30A, RDS(ON) =10mΩ @VGS = 10V

* Improved dv/dt capability

* ESD Protection Diode Embedded

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* Li-Battery Protection Absolute Maximum Ratings Tc=25℃ unless otherwise noted

PDEC2310Z-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDEC2310Z

Manufacturer:

Potens semiconductor

File Size:

463.51 KB

Description:

N-channel mosfet.

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PDEC2310Z PDEC2310Z N-Channel MOSFET Potens semiconductor

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