PDEC2209K Datasheet (Potens semiconductor)

PDEC2209K, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDEC2209K Features

* -20V,-5.6A, RDS(ON) =33mΩ @VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* Networking S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ