PDEC3096X Datasheet - Potens semiconductor

PDEC3096X N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDEC3096X Features

* 30V, 80A, RDS(ON) =5.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* G-S ESD Protection Diode Embedded Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ u

PDEC3096X-Potenssemiconductor.pdf

PDEC3096X Datasheet Preview — Preview of PDEC3096X PDF

Datasheet Details

Part number:

PDEC3096X

Manufacturer:

Potens semiconductor

File Size:

605.75 KB

Description:

N-channel mosfet.

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PDEC3096X PDEC3096X N-Channel MOSFET Potens semiconductor

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