Part number:
PDEC3096X
Manufacturer:
Potens semiconductor
File Size:
605.75 KB
Description:
N-channel mosfet.
* 30V, 80A, RDS(ON) =5.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* G-S ESD Protection Diode Embedded Applications
* MB / VGA / Vcore
* POL Applications
* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ u
PDEC3096X Datasheet (605.75 KB)
PDEC3096X
Potens semiconductor
605.75 KB
N-channel mosfet.
📁 Related Datasheet
PDEC3098X - N-Channel MOSFET
(Potens semiconductor)
30V N-Channel MOSFETs
PDEC3098X
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC3907W - P-Channel MOSFETs
(Potens semiconductor)
30V P-Channel MOSFETs
PDEC3907W
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC3907Z - P-Channel MOSFET
(Potens semiconductor)
30V P-Channel MOSFETs
PDEC3907Z
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC3908Z - N-Channel MOSFET
(Potens semiconductor)
30V N-Channel MOSFETs
PDEC3908Z
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC2209K - P-Channel MOSFET
(Potens semiconductor)
Preliminary datasheet
20V P-Channel Dual MOSFETs
General Description
These P-Channel enhancement mode power field effect transistors are using trench.
PDEC2210K - N-Channel MOSFET
(Potens semiconductor)
20V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.
PDEC2210V - N-Channel MOSFET
(Potens semiconductor)
.
PDEC2310Z - N-Channel MOSFET
(Potens semiconductor)
20V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.