Part number:
PDEC3907Z
Manufacturer:
Potens semiconductor
File Size:
467.72 KB
Description:
P-channel mosfet.
* -30V,-30A, RDS(ON) =20mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications
* ESD Protection Embedded Applications
* MB / VGA / Vcore
* POL Applications
* Load Switch
* LED Application S Absolute Maximum Ratings Tc=2
PDEC3907Z Datasheet (467.72 KB)
PDEC3907Z
Potens semiconductor
467.72 KB
P-channel mosfet.
📁 Related Datasheet
PDEC3907W - P-Channel MOSFETs
(Potens semiconductor)
30V P-Channel MOSFETs
PDEC3907W
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC3908Z - N-Channel MOSFET
(Potens semiconductor)
30V N-Channel MOSFETs
PDEC3908Z
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC3096X - N-Channel MOSFET
(Potens semiconductor)
30V N-Channel MOSFETs
PDEC3096X
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC3098X - N-Channel MOSFET
(Potens semiconductor)
30V N-Channel MOSFETs
PDEC3098X
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
PDEC2209K - P-Channel MOSFET
(Potens semiconductor)
Preliminary datasheet
20V P-Channel Dual MOSFETs
General Description
These P-Channel enhancement mode power field effect transistors are using trench.
PDEC2210K - N-Channel MOSFET
(Potens semiconductor)
20V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.
PDEC2210V - N-Channel MOSFET
(Potens semiconductor)
.
PDEC2310Z - N-Channel MOSFET
(Potens semiconductor)
20V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.