PDEC3908Z Datasheet, Mosfet, Potens semiconductor

PDEC3908Z Features

• Mosfet
• 30V,48A, RDS(ON) =8.5mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available Applications

PDF File Details

Part number:

PDEC3908Z

Manufacturer:

Potens semiconductor

File Size:

860.57kb

Download:

📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDEC3908Z Application

• Applications PPAK3x3 Pin Configuration DDDD S S SG G D S BVDSS 30V RDSON 8.5m ID 48A Features
• 30V,48A, RDS(ON) =8.5mΩ@VGS = 10V

TAGS

PDEC3908Z

Potens semiconductor

📁 Related Datasheet

PDEC3907W - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDEC3907W General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEC3907Z - P-Channel MOSFET (Potens semiconductor)
30V P-Channel MOSFETs PDEC3907Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEC3096X - N-Channel MOSFET (Potens semiconductor)
30V N-Channel MOSFETs PDEC3096X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEC3098X - N-Channel MOSFET (Potens semiconductor)
30V N-Channel MOSFETs PDEC3098X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEC2209K - P-Channel MOSFET (Potens semiconductor)
Preliminary datasheet 20V P-Channel Dual MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench.

PDEC2210K - N-Channel MOSFET (Potens semiconductor)
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDEC2210V - N-Channel MOSFET (Potens semiconductor)
.

PDEC2310Z - N-Channel MOSFET (Potens semiconductor)
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDEB2310Y - N-Channel MOSFET (Potens semiconductor)
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDEB3907Z - P-Channel MOSFET (Potens semiconductor)
Preliminary datasheet 30V P-Channel MOSFETs PDEB3907Z General Description These P-Channel enhancement mode power field effect transistors are using.