PDEQ2309

P-Channel MOSFETs

Potens semiconductor

PDEQ2309 Features

* -20V,-5.8A, RDS(ON) =33mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VD

PDEQ2309 General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDEQ2309 Datasheet (779.53 KB)

PDEQ2309 Datasheet Preview — Preview of PDEQ2309 PDF

Datasheet Details

Part number:

PDEQ2309

Manufacturer:

Potens semiconductor

File Size:

779.53 KB

Description:

P-channel mosfets.

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PDEQ2309 P-Channel MOSFETs Potens semiconductor

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PDEQ2309 Features

PDEQ2309 General Description

Datasheet Details

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Description:

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