PDEB2310Y Datasheet (Potens semiconductor)

PDEB2310Y, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDEB2310Y Features

* 20V,11A, RDS(ON) =10mΩ @VGS = 10V

* Improved dv/dt capability

* ESD Protection Diode Embedded

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* Li-Battery Protection Absolute Maximum Ratings Tc=25℃ unless otherwise noted