PDEB2310Y

N-Channel MOSFET

Potens semiconductor

PDEB2310Y Features

* 20V,11A, RDS(ON) =10mΩ @VGS = 10V

* Improved dv/dt capability

* ESD Protection Diode Embedded

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* Li-Battery Protection Absolute Maximum Ratings Tc=25℃ unless otherwise noted

PDEB2310Y General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDEB2310Y Datasheet (704.91 KB)

PDEB2310Y Datasheet Preview — Preview of PDEB2310Y PDF

Datasheet Details

Part number:

PDEB2310Y

Manufacturer:

Potens semiconductor

File Size:

704.91 KB

Description:

N-channel mosfet.

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PDEB2310Y N-Channel MOSFET Potens semiconductor

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PDEB2310Y Features

PDEB2310Y General Description

Datasheet Details

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