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PDN4911S Datasheet - Potens semiconductor

P-Channel MOSFETs

PDN4911S Features

* -40V,-2.9A, RDS(ON) =68mĪ©@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications Applications

* POL Applications

* Load Switch

* LED Application Absolute Maximum Ratings Tc=25ā„ƒ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG

PDN4911S General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN4911S Datasheet (776.83 KB)

Preview of PDN4911S PDF

Datasheet Details

Part number:

PDN4911S

Manufacturer:

Potens semiconductor

File Size:

776.83 KB

Description:

P-channel mosfets.

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PDN4911S P-Channel MOSFETs Potens semiconductor

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