PDS4906
Potens semiconductor
457.45kb
N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e
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PDS4903 - P-Channel MOSFETs
(Potens semiconductor)
40V P-Channel MOSFETs
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
PDS4909 - P-Channel MOSFETs
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PDS4910 - N-Channel MOSFETs
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
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PDS4150 - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
(Diodes)
Product Summary
VR(V) 150
IF (A) 4.0
VF MAX (V) @ +25°C
0.76
Green PDS4150
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI®
IR MAX (mA) @ +25°.
PDS4200H - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
(Diodes)
PDS4200H
Green
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI®
Features
Lower Forward Voltage Drop than Ultrafast Rectifiers Very Low Leakage.
PDS4200HQ - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
(DIODES)
PDS4200HQ
Green
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5
Product Summary (@TA = +25°C)
VRRM (V) 200
IO(MAX) (A) 4
VF(MAX) (V) 0.84
IR(.
PDS4229W-B - Service Manual
(Fujitsu)
PDS4229W-B
FUJITSU GENERAL Proprietary
Copy Prohibited
CONTENTS
IMPORTANT INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
PDS4701 - N+P Channel MOSFETs
(Potens semiconductor)
40V N+P Dual Channel MOSFETs
PDS4701
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO.