PDS4906 Datasheet, mosfets equivalent, Potens semiconductor

PDS4906 Features

  • Mosfets
  • 40V, 15A, RDS(ON)=9mΩ@VGS = 10V
  • Improved dv/dt capability
  • Fast switching
  • Green Device Available Applications
  • Notebook
  • Load Sw

PDF File Details

Part number:

PDS4906

Manufacturer:

Potens semiconductor

File Size:

457.45kb

Download:

📄 Datasheet

Description:

N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

Datasheet Preview: PDS4906 📥 Download PDF (457.45kb)
Page 2 of PDS4906 Page 3 of PDS4906

PDS4906 Application

  • Applications SOP8 Pin Configuration D DD D SS SG G D S BVDSS 40V RDSON 9m ID 15A Features
  • 40V, 15A, RDS(ON)=9mΩ@VGS = 10V
  • <

TAGS

PDS4906
N-Channel
MOSFETs
Potens semiconductor

📁 Related Datasheet

PDS4903 - P-Channel MOSFETs (Potens semiconductor)
40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.

PDS4904 - N-Channel MOSFETs (Potens semiconductor)
40V N-Channel MOSFETs PDS4904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS4909 - P-Channel MOSFETs (Potens semiconductor)
40V P-Channel MOSFETs PDS4909 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS4910 - N-Channel MOSFETs (Potens semiconductor)
40V N-Channel MOSFETs PDS4910 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS4956 - N-Channel MOSFETs (Potens semiconductor)
40V N-Channel MOSFETs PDS4956 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS4150 - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
Product Summary VR(V) 150 IF (A) 4.0 VF MAX (V) @ +25°C 0.76 Green PDS4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI® IR MAX (mA) @ +25°.

PDS4200H - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
PDS4200H Green 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI® Features  Lower Forward Voltage Drop than Ultrafast Rectifiers  Very Low Leakage.

PDS4200HQ - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (DIODES)
PDS4200HQ Green 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5 Product Summary (@TA = +25°C) VRRM (V) 200 IO(MAX) (A) 4 VF(MAX) (V) 0.84 IR(.

PDS4229W-B - Service Manual (Fujitsu)
PDS4229W-B FUJITSU GENERAL Proprietary Copy Prohibited CONTENTS IMPORTANT INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

PDS4701 - N+P Channel MOSFETs (Potens semiconductor)
40V N+P Dual Channel MOSFETs PDS4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts