Datasheet4U Logo Datasheet4U.com

PDS4906 Datasheet - Potens semiconductor

PDS4906 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS4906 Features

* 40V, 15A, RDS(ON)=9mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Notebook

* Load Switch

* LED applications

* Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG T

PDS4906-Potenssemiconductor.pdf

Preview of PDS4906 PDF
PDS4906 Datasheet Preview Page 2 PDS4906 Datasheet Preview Page 3

Datasheet Details

Part number:

PDS4906

Manufacturer:

Potens semiconductor

File Size:

457.45 KB

Description:

N-channel mosfets.

📁 Related Datasheet

PDS4903 P-Channel MOSFETs (Potens semiconductor)

PDS4904 N-Channel MOSFETs (Potens semiconductor)

PDS4909 P-Channel MOSFETs (Potens semiconductor)

PDS4910 N-Channel MOSFETs (Potens semiconductor)

PDS4956 N-Channel MOSFETs (Potens semiconductor)

PDS4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)

PDS4200H 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)

PDS4200HQ 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (DIODES)

TAGS

PDS4906 PDS4906 N-Channel MOSFETs Potens semiconductor

PDS4906 Distributor