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PDS4910 Datasheet - Potens semiconductor

PDS4910 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS4910 Features

* 40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Notebook

* Load Switch

* LED applications

* Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG

PDS4910-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDS4910

Manufacturer:

Potens semiconductor

File Size:

768.68 KB

Description:

N-channel mosfets.

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PDS4910 PDS4910 N-Channel MOSFETs Potens semiconductor

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