PDS4701
Potens semiconductor
867.01kb
N+p channel mosfets. These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has
TAGS
📁 Related Datasheet
PDS4150 - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
(Diodes)
Product Summary
VR(V) 150
IF (A) 4.0
VF MAX (V) @ +25°C
0.76
Green PDS4150
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI®
IR MAX (mA) @ +25°.
PDS4200H - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
(Diodes)
PDS4200H
Green
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI®
Features
Lower Forward Voltage Drop than Ultrafast Rectifiers Very Low Leakage.
PDS4200HQ - 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
(DIODES)
PDS4200HQ
Green
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5
Product Summary (@TA = +25°C)
VRRM (V) 200
IO(MAX) (A) 4
VF(MAX) (V) 0.84
IR(.
PDS4229W-B - Service Manual
(Fujitsu)
PDS4229W-B
FUJITSU GENERAL Proprietary
Copy Prohibited
CONTENTS
IMPORTANT INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
PDS4806 - Dual N-Channel MOSFETs
(Potens semiconductor)
40V Dual N-Channel MOSFETs
PDS4806
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technol.
PDS4810 - Dual N-Channel MOSFETs
(Potens semiconductor)
40V Dual N-Channel MOSFETs
PDS4810
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technol.
PDS4856 - N-Channel MOSFETs
(Potens semiconductor)
40V N-Channel MOSFETs
PDS4856
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
PDS4903 - P-Channel MOSFETs
(Potens semiconductor)
40V P-Channel MOSFETs
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.
PDS4904 - N-Channel MOSFETs
(Potens semiconductor)
40V N-Channel MOSFETs
PDS4904
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
PDS4906 - N-Channel MOSFETs
(Potens semiconductor)
40V N-Channel MOSFETs
PDS4906
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .