PDS4856 Datasheet | Potens semiconductor

Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Dual Pin Configuration D2 D1 D2 D1 D1 G1 S1G1S2 G2 S1 G2 D2 S2 BVDSS 40V RDSON 15m ID 10A Features - 40V,10A,RDS(ON) =15mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Motor Drive - Power Tools - LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS IDM EAS IAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25℃) Drain Current - Continuous (TC=100℃) Drain Current -...