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PDS4856 - N-Channel MOSFETs

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V,10A,RDS(ON) =15mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PDS4856

Datasheet Details

Part number PDS4856
Manufacturer Potens semiconductor
File Size 431.14 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDS4856 Datasheet
Additional preview pages of the PDS4856 datasheet.

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Full PDF Text Transcription

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40V N-Channel MOSFETs PDS4856 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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