Datasheet Details
| Part number | PDS4806 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 431.99 KB |
| Description | Dual N-Channel MOSFETs |
| Datasheet | PDS4806-Potenssemiconductor.pdf |
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Overview: 40V Dual N-Channel MOSFETs PDS4806 General.
| Part number | PDS4806 |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 431.99 KB |
| Description | Dual N-Channel MOSFETs |
| Datasheet | PDS4806-Potenssemiconductor.pdf |
|
|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
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