PDS4909 Datasheet (Potens semiconductor)

PDS4909, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDS4909 Features

* -40V,-6.5A, RDS(ON) =45mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Paramet