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PDS4909 Datasheet - Potens semiconductor

PDS4909 P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS4909 Features

* -40V,-6.5A, RDS(ON) =45mΩ@VGS = -10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Motor Drive

* Power Tools

* LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Paramet

PDS4909-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDS4909

Manufacturer:

Potens semiconductor

File Size:

684.88 KB

Description:

P-channel mosfets.

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PDS4909 PDS4909 P-Channel MOSFETs Potens semiconductor

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