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PDN3612S N-Channel MOSFETs

PDN3612S Description

30V N-Channel MOSFETs PDN3612S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDN3612S Features

* 30V, 5.3 A, RDS(ON) =32mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDN3612S
Manufacturer
Potens semiconductor
File Size
566.84 KB
Datasheet
PDN3612S-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDN3612S-like datasheet